The Effect of the Bi Precursors, (CH3)3Bi and (C2H5)3Bi, on the Metal‐Organic Vapor Phase Epitaxy of GaAs1‐yBiy Films

E-ISSN： 1521-3862|948-1907|7-8-9|166-175

ISSN： 0948-1907

Source： CHEMICAL VAPOR DEPOSITION (ELECTRONIC), Vol.948-1907, Iss.7-8-9, 2015-09, pp. : 166-175

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