Revisiting Metal Sulfide Semiconductors: A Solution‐Based General Protocol for Thin Film Formation, Hall Effect Measurement, and Application Prospects

Publisher： John Wiley & Sons Inc

E-ISSN： 1616-3028|25|36|5739-5747

ISSN： 1616-301x

Source： ADVANCED FUNCTIONAL MATERIALS, Vol.25, Iss.36, 2015-09, pp. : 5739-5747

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract

Related content

Revisiting Metal Sulfide Semiconductors: A Solution‐Based General Protocol for Thin Film Formation, Hall Effect Measurement, and Application Prospects

By  

ADVANCED FUNCTIONAL MATERIALS, Vol. 1616-301X, Iss. 36, 2015-09 ,pp. : 5739-5747

John Wiley & Sons Inc

Access to resources Recommend Favorite

Electronic Structure of Low‐Temperature Solution‐Processed Amorphous Metal Oxide Semiconductors for Thin‐Film Transistor Applications

By  

ADVANCED FUNCTIONAL MATERIALS, Vol. 25, Iss. 12, 2015-03 ,pp. : 1873-1885

John Wiley & Sons Inc

Access to resources Recommend Favorite

Synthesis of CuInS 2 Thin Film for Solar Cells by a New Solution-based Deposition Method

By Shin Hyoung Sub  

Molecular Crystals and Liquid Crystals, Vol. 551, Iss. 1, 2011-11 ,pp. : 191-197

Taylor & Francis Ltd

Access to resources Recommend Favorite

Effect of seed crystal and composition of solution on the formation of TiO 2 thin film from aqueous solution

By Ozawa N.   Kumazawa Y.   Yao T.  

Thin Solid Films, Vol. 418, Iss. 2, 2002-10 ,pp. : 102-111

Elsevier

Access to resources Recommend Favorite

Phase transformation of solution-based p-type Cu2ZnSnS4 thin film: applicable for solar cell

By Maheshwari B. Uma   Kumar V. Senthil  

International Journal of Energy Research, Vol. 39, Iss. 6, 2015-05 ,pp. : 771-777

Barcelona Publishers Llc

Access to resources Recommend Favorite