Memory Devices: Resistive Switching Behavior in Organic–Inorganic Hybrid CH3NH3PbI3−xClx Perovskite for Resistive Random Access Memory Devices (Adv. Mater. 40/2015)

Publisher： John Wiley & Sons Inc

E-ISSN： 1521-4095|27|40|6303-6303

ISSN： 0935-9648

Source： ADVANCED MATERIALS, Vol.27, Iss.40, 2015-10, pp. : 6303-6303

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