First-principles calculations on Si (220) located 6H—SiC (1010) surface with different stacking sites

Author： Xiao-Min He   Zhi-Ming Chen   Hong-Bin Pu   Lian-Bi Li   Lei Huang  

Publisher： IOP Publishing

ISSN： 1674-1056

Source： Chinese Physics B, Vol.23, Iss.10, 2014-10, pp. : 106802-106808

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Related content

Relaxation of 6H-SiC (0001) Surface and Si Adsorption on 6H-SiC (0001): an ab initio Study

By  

Chinese Physics Letters, Vol. 32, Iss. 3, 2015-03 ,pp. : 36801-36804

IOP Publishing

Access to resources Recommend Favorite

Structures of 6H-SiC Surfaces

By  

Le Journal de Physique IV, Vol. 06, Iss. C5, 1996-09 ,pp. : C5-167-C5-172

Edp Sciences

Access to resources Recommend Favorite

Nanoscale structure of microvoids in a-Si:H: a first-principles study

By Biswas Parthapratim   Elliott Stephen R  

Journal of Physics: Condensed Matter, Vol. 27, Iss. 43, 2015-11 ,pp. : 435201-435214

IOP Publishing

Access to resources Recommend Favorite

Study of Different Edge Terminations Used for 6H-SiC Power Diodes

By  

Journal de Physique III, Vol. 7, Iss. 4, 1997-04 ,pp. : 809-818

Edp Sciences

Access to resources Recommend Favorite

Fabrication of Thin Graphene Layers on a Stacked 6H-SiC Surface in a Graphite Enclosure

By Peng-Fei Deng   Tian-Min Lei   Jin-Jun Lu   Fu-Yan Liu   Yu-Ming Zhang   Hui Guo   Yi-Men Zhang   Yue-Hu Wang   Xiao-Yan Tang  

Chinese Physics Letters, Vol. 30, Iss. 1, 2013-01 ,pp. : 18101-18104

IOP Publishing

Access to resources Recommend Favorite