Electronic Structure Study of Gallium and Indium Doped (4,4) armchair Single-Walled Boron Nitride Nanotubes for Production of Solid-State Devices

Author: Baei Mohammad T.   Hashemian Saeedeh   Torabi Parviz   Gharehbaghi Akram  

Publisher: Taylor & Francis Ltd

ISSN: 1536-383X

Source: Fullerenes, Nanotubes and Carbon Nanostructures, Vol.23, Iss.1, 2015-01, pp. : 68-77

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