Universal description of crossover between the Mott regime and the Coloumb-gap regime in hopping conductivity: Application to compensated CdTe

Author： Agrinskaya N.   Kozub V.  

Publisher： MAIK Nauka/Interperiodica

ISSN： 1063-7761

Source： Journal of Experimental and Theoretical Physics, Vol.89, Iss.6, 1999-12, pp. : 1125-1129

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Related content

Universal spin-induced magnetoresistance in the variable-range hopping regime

By Meir Y.  

EPL (EUROPHYSICS LETTERS), Vol. 33, Iss. 6, 2010-03 ,pp. : 471-476

Edp Sciences

Access to resources Recommend Favorite

High-frequency hopping conductivity and permittivity in compensated semiconductors

By Kagan V.  

Journal of Experimental and Theoretical Physics, Vol. 90, Iss. 2, 2000-02 ,pp. : 400-403

MAIK Nauka/Interperiodica

Access to resources Recommend Favorite

Homogeneity along Cl-compensated thm grown CdTe ingot

By  

Revue de Physique Appliquée (Paris), Vol. 12, Iss. 2, 1977-02 ,pp. : 195-198

Edp Sciences

Access to resources Recommend Favorite

Giant magnetoresistance in the variable-range hopping regime

By Ioffe L.   Spivak B.  

Journal of Experimental and Theoretical Physics, Vol. 117, Iss. 3, 2013-09 ,pp. : 551-569

MAIK Nauka/Interperiodica

Access to resources Recommend Favorite