Author： Pokrovskii Ya. Smirnova O. Khval’kovskii N.
Publisher： MAIK Nauka/Interperiodica
ISSN： 1063-7761
Source： Journal of Experimental and Theoretical Physics, Vol.90, Iss.2, 2000-02, pp. : 404-406
Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.
Related content
ELECTRICAL RECOMBINATION BEHAVIOUR AT DISLOCATIONS IN GALLIUM PHOSPHIDE AND SILICON
Le Journal de Physique Colloques, Vol. 40, Iss. C6, 1979-06 ,pp. :
Access to resources
Recommend
Impact-ionization autosolitons in silicon with deep impurity levels
By Musaev A.
Technical Physics Letters, Vol. 29, Iss. 12, 2003-12 ,pp. :
Energy levels and radiative rates for optically allowed and forbidden transitions of Ni XXV ion
Astronomy & Astrophysics, Vol. 488, Iss. 3, 2008-09 ,pp. :
KINETICS OF FIELD EVAPORATION OF GALLIUM PHOSPHIDE IN THE PRESENCE OF HYDROGEN
Le Journal de Physique Colloques, Vol. 50, Iss. C8, 1989-11 ,pp. :