Effect of rapid thermal annealing on the parameters of gallium-arsenide low-barrier diodes with near-surface δ-doping

Author： Murel A. Daniltsev V. Demidov E. Drozdov M. Shashkin V.

ISSN： 1063-7826

Source： Semiconductors, Vol.47, Iss.11, 2013-11, pp. : 1470-1474

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