Distribution of silicon over sublattices in semiconducting A₃B₅ compounds

Author： Ponomarev K. Korzhavyi P. Vekilov Yu.

ISSN： 1063-7834

Source： Physics of the Solid State, Vol.39, Iss.2, 1997-02, pp. : 230-232

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Related content

IONIZATION OF CLUSTERS SPUTTERED FROM A3B5 COMPOUNDS

Le Journal de Physique Colloques, Vol. 50, Iss. C2, 1989-02 ,pp. : C2-93-C2-98

Edp Sciences

Access to resources Recommend Favorite

Development of technology obtaining layers A3B5 compounds with variable bandgap for use in solar cells

Journal of Physics: Conference Series , Vol. 572, Iss. 1, 2014-12 ,pp. : 275-278

IOP Publishing

Access to resources Recommend Favorite

PHYSICAL PROPERTIES OF METALLIC MAGNETIC COMPOUNDS : 5f-LOCALIZED APPROACHThe structure, magnetic and related properties of the semimetallic, semiconducting and ionic compounds of actinides

Le Journal de Physique Colloques, Vol. 40, Iss. C4, 1979-04 ,pp. : C4-43-C4-48

Edp Sciences

Access to resources Recommend Favorite

DEVICE APPLICATIONS OF THE TERNARY SEMICONDUCTING COMPOUNDS

Le Journal de Physique Colloques, Vol. 36, Iss. C3, 1975-09 ,pp. : C3-89-C3-99

Edp Sciences

Access to resources Recommend Favorite

The distribution of the valence electron density in predominantly ionic crystals with different Bravais sublattices

By Zhuravlev Yu. Poplavnoi A.

Physics of the Solid State, Vol. 45, Iss. 1, 2003-01 ,pp. : 36-40

MAIK Nauka/Interperiodica

Access to resources Recommend Favorite