Capturing properties of a threefold coordinated silicon atom in silicon nitride: Positive correlation energy model

Author： Gritsenko V. Novikov Yu. Shaposhnikov A. Wong H. Zhidomirov G.

ISSN： 1063-7834

Source： Physics of the Solid State, Vol.45, Iss.11, 2003-11, pp. : 2031-2035

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Related content

Model of the pair phosphorus atom-interstitial silicon atom

By Chelyadinskii A. Burenkov V.

Physics of the Solid State, Vol. 40, Iss. 11, 1998-11 ,pp. : 1806-1808

MAIK Nauka/Interperiodica

Access to resources Recommend Favorite

Hole trapping on the twofold-coordinated silicon atom in SiO₂

By Shaposhnikov A. Gritsenko V. Zhidomirov G. Roger M.

Physics of the Solid State, Vol. 44, Iss. 6, 2002-06 ,pp. : 1028-1030

MAIK Nauka/Interperiodica

Access to resources Recommend Favorite

INFLUENCE OF CORRELATION EFFECTS ON THE ELECTRONIC PROPERTIES OF AMORPHOUS SILICON

Le Journal de Physique Colloques, Vol. 42, Iss. C4, 1981-10 ,pp. : C4-827-C4-830

Edp Sciences

Access to resources Recommend Favorite

PLASMA DEPOSITION OF SILICON NITRIDE

Le Journal de Physique IV, Vol. 02, Iss. C2, 1991-09 ,pp. : C2-413-C2-420

Edp Sciences

Access to resources Recommend Favorite

Microstructure and Properties of Thermally Sprayed Silicon Nitride-Based Coatings

By Thiele S. Heimann R. B. Berger L.-M. Herrmann M. Nebelung M. Schnick T. Wielage B. Vuoristo P.

Journal of Thermal Spray Technology, Vol. 11, Iss. 2, 2002-06 ,pp. : 218-225

Springer Publishing Company

Access to resources Recommend Favorite