Effect of the p-n junction breakdown mechanism on the Er3+ ion electroluminescence intensity and excitation efficiency in Si: Er epitaxial layers grown through sublimation molecular beam epitaxy

Author： Shmagin V.   Remizov D.   Krasil’nik Z.   Kuznetsov V.   Shabanov V.   Krasil’nikova L.   Kryzhkov D.   Drozdov M.  

Publisher： MAIK Nauka/Interperiodica

ISSN： 1063-7834

Source： Physics of the Solid State, Vol.46, Iss.1, 2004-01, pp. : 109-112

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Related content

Er3+ ion electroluminescence of p +-Si/n-Si: Er/n +-Si diode structure under breakdown conditions

By Shmagin V.   Remizov D.   Obolenskii S.   Kryzhkov D.   Drozdov M.   Krasil’nik Z.  

Physics of the Solid State, Vol. 47, Iss. 1, 2005-01 ,pp. : 125-128

MAIK Nauka/Interperiodica

Access to resources Recommend Favorite

Crystal lattice defects and Hall mobility of electrons in Si: Er/Si layers grown by sublimation molecular-beam epitaxy

By Kuznetsov V.   Rubtsova R.   Shabanov V.   Kasatkin A.   Sedova S.   Maksimov G.   Krasil’nik Z.   Demidov E.  

Physics of the Solid State, Vol. 47, Iss. 1, 2005-01 ,pp. : 102-105

MAIK Nauka/Interperiodica

Access to resources Recommend Favorite

Analysis of the gain and luminescence properties of Si/Si1−x Gx: Er/Si heterostructures produced by sublimation molecular-beam epitaxy in a gas phase

By Krasil’nikova L.   Stepikhova M.   Drozdov Yu.   Drozdov M.   Krasil’nik Z.   Shengurov V.   Chalkov V.   Svetlov S.   Gusev O.  

Physics of the Solid State, Vol. 47, Iss. 1, 2005-01 ,pp. : 93-97

MAIK Nauka/Interperiodica

Access to resources Recommend Favorite

Effective excitation cross section and lifetime of Er3+ ions in Si: Er light-emitting diodes fabricated by sublimation molecular-beam epitaxy

By Remizov D.   Shmagin V.   Antonov A.   Kuznetsov V.   Krasil’nik Z.  

Physics of the Solid State, Vol. 47, Iss. 1, 2005-01 ,pp. : 98-101

MAIK Nauka/Interperiodica

Access to resources Recommend Favorite

Infrared lattice-reflection spectroscopy of Zn1−x CdxSe epitaxial layers grown on a GaAs substrate by molecular-beam epitaxy

By Vodop’yanov L.   Kozyrev S.   Sadof’ev Yu.  

Physics of the Solid State, Vol. 41, Iss. 6, 1999-06 ,pp. : 893-896

MAIK Nauka/Interperiodica

Access to resources Recommend Favorite