Redistribution of dislocations in silicon near stress concentrators

Author： Orlov A.   Solov’ev A.   Skvortsov A.   Yavtushenko I.  

Publisher： MAIK Nauka/Interperiodica

ISSN： 1063-7834

Source： Physics of the Solid State, Vol.47, Iss.11, 2005-11, pp. : 2049-2054

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Related content

On the redistribution of dislocations in silicon single crystals in the vicinity of stress concentrators

By Orlov A.   Solov’ev A.   Yavtushenko I.   Skvortsov A.  

Physics of the Solid State, Vol. 49, Iss. 6, 2007-06 ,pp. : 1093-1097

MAIK Nauka/Interperiodica

Access to resources Recommend Favorite

Effect of a magnetic field on the starting stress and mobility of individual dislocations in silicon

By Badylevich M.   Iunin Yu.   Kveder V.   Orlov V.   Osip’yan Yu.  

Journal of Experimental and Theoretical Physics, Vol. 97, Iss. 3, 2003-09 ,pp. : 601-605

MAIK Nauka/Interperiodica

Access to resources Recommend Favorite

ON THE CORE STRUCTURE AND MOBILITY OF DISLOCATIONS IN SILICON UNDER HIGH STRESS

By  

Le Journal de Physique Colloques, Vol. 39, Iss. C2, 1978-06 ,pp. : C2-114-C2-115

Edp Sciences

Access to resources Recommend Favorite

GLIDE OF PARTIAL DISLOCATIONS IN SILICON

By  

Le Journal de Physique Colloques, Vol. 43, Iss. C1, 1982-10 ,pp. : C1-45-C1-50

Edp Sciences

Access to resources Recommend Favorite

EPR OF DISLOCATIONS IN SILICON

By  

Le Journal de Physique Colloques, Vol. 40, Iss. C6, 1979-06 ,pp. : C6-101-C6-106

Edp Sciences

Access to resources Recommend Favorite