Related content

Positive delayed photoconductivity in double heterostructures Al_0.5Ga_0.5As/GaAs/Al_0.5Ga_0.5As of the p-type

By Kraak W.   Minina N.   Savin A.   Ilievsky A.   Sorenson K.  

Technical Physics Letters, Vol. 28, Iss. 6, 2002-06 ,pp. : 527-529

MAIK Nauka/Interperiodica

Access to resources Recommend Favorite

Low-temperature method of cleaning p-GaN(0001) surfaces for photoemitters with effective negative electron affinity

By Tereshchenko O.   Shaibler G.   Yaroshevich A.   Shevelev S.   Terekhov A.   Lundin V.   Zavarin E.   Besyul’kin A.  

Physics of the Solid State, Vol. 46, Iss. 10, 2004-10 ,pp. : 1949-1953

MAIK Nauka/Interperiodica

Access to resources Recommend Favorite

Low-temperature hopping conduction over the upper Hubbard band in p-GaAs/AlGaAs multilayered structures

By Agrinskaya N.   Kozub V.   Ivanov Yu.   Ustinov V.   Chernyaev A.   Shamshur D.  

Journal of Experimental and Theoretical Physics, Vol. 93, Iss. 2, 2001-08 ,pp. : 424-428

MAIK Nauka/Interperiodica

Access to resources Recommend Favorite

Negative persistent photoconductivity in GaAs (δ-Sn) structures

By Kul’bachinskii V.   Kytin V.   Lunin R.   Golikov A.   Demin A.   Bugaev A.   Senichkin A.   Visser A.   Schaijk R.  

Journal of Experimental and Theoretical Physics, Vol. 89, Iss. 6, 1999-12 ,pp. : 1154-1159

MAIK Nauka/Interperiodica

Access to resources Recommend Favorite

A LOW TEMPERATURE COLD WORK INTERNAL-FRICTION PEAK IN Al-0.5 Wt % Ga

By  

Le Journal de Physique Colloques, Vol. 42, Iss. C5, 1981-10 ,pp. : C5-265-C5-270

Edp Sciences

Access to resources Recommend Favorite