Kinetic model of growth and coalescence of oxygen and carbon precipitates during cooling of As-grown silicon crystals

ISSN： 1063-7834

Source： Physics of the Solid State, Vol.53, Iss.1, 2011-01, pp. : 119-126

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Related content

X-ray diffraction investigation into the specific features of the growth kinetics of oxygen-containing precipitates in Czochralski-grown silicon crystals

By Novikov N. Tesel’ko P. Mikhalyuk O.

Physics of the Solid State, Vol. 49, Iss. 2, 2007-02 ,pp. : 215-219

MAIK Nauka/Interperiodica

Access to resources Recommend Favorite

The effect of oxygen precipitates on the recombination characteristics of silicon

By Bulyarskii S. Ambrozevich A. Svetukhin V. Dzhabrailov T.

Technical Physics Letters, Vol. 27, Iss. 3, 2001-03 ,pp. : 200-201

MAIK Nauka/Interperiodica

Access to resources Recommend Favorite

Formation of oriented rodlike nickel silicide precipitates during magnetron deposition of carbon and nickel on silicon

By Chernykh P. Chechenin N. Sergachev I. Timofeev M.

Journal of Surface Investigation. X-ray, Synchrotron and Neutron Techniques, Vol. 5, Iss. 1, 2011-02 ,pp. : 65-69

MAIK Nauka/Interperiodica

Access to resources Recommend Favorite

Growth of negative filamentary crystals during spark cutting of silicon carbide

By Karachinov V.

Technical Physics, Vol. 43, Iss. 7, 1998-07 ,pp. : 868-869

MAIK Nauka/Interperiodica

Access to resources Recommend Favorite

Field Emission from As-Grown and Ion-Beam-Sharpened Diamond Particles Deposited on Silicon Tips

Le Journal de Physique IV, Vol. 06, Iss. C5, 1996-09 ,pp. : C5-103-C5-106

Edp Sciences

Access to resources Recommend Favorite