Related content

Extended analysis of the frequency dependence of the admittance of MIS structures with pulsed-laser-deposited AlN films

By  

Journal of Physics: Conference Series , Vol. 113, Iss. 1, 2008-05 ,pp. : 223-226

IOP Publishing

Access to resources Recommend Favorite

Influence of plasma volume discharge in atmospheric- pressure air on the admittance of MIS structures based on MBE p-HgCdTe

By  

Journal of Physics: Conference Series , Vol. 652, Iss. 1, 2015-11 ,pp. : 16-19

IOP Publishing

Access to resources Recommend Favorite

Analyses of temperature-dependent interface states, series resistances, and AC electrical conductivities of Al/p—Si and Al/Bi₄Ti₃O₁₂/p—Si structures by using the admittance spectroscopy method

By Yıldırım Mert   Durmuş Perihan   Altındal Şemsettin  

Chinese Physics B, Vol. 22, Iss. 10, 2013-10 ,pp. : 108502-108507

IOP Publishing

Access to resources Recommend Favorite

Simultaneously reducing the intensity and frequency noise of single-frequency phosphate fiber laser

By Li Can   Xu Shanhui   Xiao Yu   Feng Zhouming   Yang Changsheng   Zhou Kaijun   Yang Zhongmin  

Journal of Optics, Vol. 17, Iss. 7, 2015-07 ,pp. : 75802-75805

IOP Publishing

Access to resources Recommend Favorite

High-power single-frequency tunable solid-state lasers

By Antsiferov V.  

Technical Physics, Vol. 43, Iss. 10, 1998-10 ,pp. : 1203-1208

MAIK Nauka/Interperiodica

Access to resources Recommend Favorite