Author: Levin M. Bormontov E. Tatarintsev A. Gitlin V.
Publisher: MAIK Nauka/Interperiodica
ISSN: 1063-7842
Source: Technical Physics, Vol.44, Iss.8, 1999-08, pp. : 923-927
Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.
Related content
CAPACITANCE TRANSIENT SPECTROSCOPY OF STATES LOCALISED AT DISLOCATIONS
Le Journal de Physique Colloques, Vol. 44, Iss. C4, 1983-09 ,pp. :
Shot noise behaviour of subthreshold MOS transistors
Revue de Physique Appliquée (Paris), Vol. 13, Iss. 12, 1978-12 ,pp. :
New Journal of Physics, Vol. 12, Iss. 12, 2010-12 ,pp. :
DENSITY OF STATES IN THE GAP OF a-As
Le Journal de Physique Colloques, Vol. 42, Iss. C4, 1981-10 ,pp. :