Author: Babichev G. Kozlovskii S. Sharan N.
Publisher: MAIK Nauka/Interperiodica
ISSN: 1063-7842
Source: Technical Physics, Vol.45, Iss.10, 2000-10, pp. : 1276-1280
Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.
Related content
SiGe Hetero FETs on silicon at cryogenic temperature
Le Journal de Physique IV, Vol. 12, Iss. 3, 2002-05 ,pp. :
InGaAs SINGLE- AND DUAL-GATE HIGH-SPEED FETs : PREPARATION AND PERFORMANCE
Le Journal de Physique Colloques, Vol. 49, Iss. C4, 1988-09 ,pp. :