Related content

Laser radiation confinement at 1.06 μm in compensated gallium arsenide

By Kalintsev A.   Mikheeva O.   Sidorov A.  

Technical Physics Letters, Vol. 27, Iss. 12, 2001-12 ,pp. : 1067-1068

MAIK Nauka/Interperiodica

Access to resources Recommend Favorite

Special features of the periodic-pulse-train laser radiation confinement in doped gallium arsenide and zinc selenide

By Mikheeva O.   Sidorov A.   Khaiikina A.   Chuguevets E.  

Technical Physics Letters, Vol. 28, Iss. 1, 2002-01 ,pp. : 48-49

MAIK Nauka/Interperiodica

Access to resources Recommend Favorite

Self-organization of nanoislands on the surface of silicon and gallium arsenide single crystals stimulated by spatially periodic laser radiation fields

By Verevkin Yu.   Daume É.   Petryakov V.   Gushchin Yu.   Tikhov S.  

Technical Physics Letters, Vol. 31, Iss. 9, 2005-09 ,pp. : 759-761

MAIK Nauka/Interperiodica

Access to resources Recommend Favorite

On the properties of a radiation-induced defect responsible for the 1.0-eV IR absorption band in gallium arsenide

By Dzhibuti Z.   Dolidze N.  

Technical Physics Letters, Vol. 27, Iss. 12, 2001-12 ,pp. : 1008-1009

MAIK Nauka/Interperiodica

Access to resources Recommend Favorite

On the possible spatial orientation of a radiation-induced defect responsible for the 1.0-eV IR absorption band in gallium arsenide

By Dzhibuti Z.   Dolidze N.  

Technical Physics Letters, Vol. 26, Iss. 9, 2000-09 ,pp. : 789-790

MAIK Nauka/Interperiodica

Access to resources Recommend Favorite