Author： Blank T. Gol’dberg Yu. Konstantinov O. Nikitin V. Posse E.
Publisher： MAIK Nauka/Interperiodica
ISSN： 1063-7842
Source： Technical Physics, Vol.52, Iss.2, 2007-02, pp. : 285-287
Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.
Related content
Access to resources
Recommend
DIFFUSION BARRIER LAYERS FOR OHMIC CONTACTS TO GaAs
Le Journal de Physique Colloques, Vol. 49, Iss. C4, 1988-09 ,pp. :
NON-ALLOYED Ge/Pd OHMIC CONTACT FOR GaAs MESFET'S
Le Journal de Physique Colloques, Vol. 49, Iss. C4, 1988-09 ,pp. :
PRODUCTION OF SMALL OHMIC CONTACTS BY LASER PROCESSING FOR Si AND GaAs DEVICES
Le Journal de Physique Colloques, Vol. 44, Iss. C5, 1983-10 ,pp. :
Low noise ohmic contacts on n and p type GaSb
Journal de Physique III, Vol. 3, Iss. 9, 1993-09 ,pp. :