Equivalent circuit of silicon diodes subjected to high-fluence electron irradiation

Author： Poklonski N.   Gorbachuk N.   Shpakovski S.   Wieck A.  

Publisher： MAIK Nauka/Interperiodica

ISSN： 1063-7842

Source： Technical Physics, Vol.55, Iss.10, 2010-10, pp. : 1463-1471

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Related content

Short-wavelength ablation of polymers in the high-fluence regime

By Liberatore Chiara   Mann Klaus   Müller Matthias   Pina Ladislav   Juha Libor   Vyšín Ludek   Rocca Jorge J   Endo Akira   Mocek Tomas  

Physica Scripta, Vol. 2014, Iss. 161, 2014-05 ,pp. : 14066-14069

IOP Publishing

Access to resources Recommend Favorite

ELECTRON IRRADIATION IN AMORPHOUS HYDROGENATED SILICON

By  

Le Journal de Physique Colloques, Vol. 42, Iss. C4, 1981-10 ,pp. : C4-803-C4-806

Edp Sciences

Access to resources Recommend Favorite

Impact of surface morphology on sputtering during high-fluence plasma exposure

By Doerner R P   Nishijima D   Schwarz-Selinger T  

Physica Scripta, Vol. 2014, Iss. 159, 2014-04 ,pp. : 14040-14043

IOP Publishing

Access to resources Recommend Favorite

An Equivalent Circuit Model for Analyzing Separate Confinement Heterostructure Quantum Well Laser Diodes Including Chirp and Carrier Transport Effects

By Zarifkar Abbas  

Fiber And Integrated Optics, Vol. 28, Iss. 4, 2009-07 ,pp. : 249-267

Taylor & Francis Ltd

Access to resources Recommend Favorite

Filling of traps with electrons in insulators subjected to intense electron irradiation

By Kulikov V.  

Technical Physics, Vol. 52, Iss. 5, 2007-05 ,pp. : 559-564

MAIK Nauka/Interperiodica

Access to resources Recommend Favorite