p-GaSe-n-Ga2S3 heterojunctions

Author： Kovalyuk M.   Vitkovskaya V.   Tovarnitskii M.  

Publisher： MAIK Nauka/Interperiodica

ISSN： 1063-7850

Source： Technical Physics Letters, Vol.23, Iss.5, 1997-05, pp. : 385-385

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Related content

p-GaSe-n-recrystallized InSe heterojunctions

By Katerinchuk V.   Kovalyuk Z.   Kaminskii V.  

Technical Physics Letters, Vol. 26, Iss. 1, 2000-01 ,pp. : 54-55

MAIK Nauka/Interperiodica

Access to resources Recommend Favorite

On the mechanisms of current transfer in n-In2Se3-p-GaSe heterostructures

By Drapak S.   Kovalyuk Z.   Netyaga V.   Orletskii V.  

Technical Physics Letters, Vol. 28, Iss. 9, 2002-09 ,pp. : 707-710

MAIK Nauka/Interperiodica

Access to resources Recommend Favorite

Photosensitivity of GaAs: NGaP: N/GaAs (GaP) heterojunctions in linearly polarized radiation

By Ivanov-Omskii V.   Rud’ Yu.   Rud’ V.  

Technical Physics, Vol. 44, Iss. 6, 1999-06 ,pp. : 732-735

MAIK Nauka/Interperiodica

Access to resources Recommend Favorite

Negative differential conductivity in a p +-Bi2Te3-p-GaSe isotype heterostructure

By Drapak S.   Manasson V.   Netyaga V.   Kovalyuk Z.  

Technical Physics Letters, Vol. 28, Iss. 8, 2002-08 ,pp. : 660-663

MAIK Nauka/Interperiodica

Access to resources Recommend Favorite

Sputtering of A 3 B 5 materials (GaP, GaAs, GaSb, InP, and InSb) by 2-to 14-keV N 2+ ions

By Soshnikov I.   Bert N.  

Technical Physics, Vol. 45, Iss. 9, 2000-09 ,pp. : 1201-1206

MAIK Nauka/Interperiodica

Access to resources Recommend Favorite