The possibility of improving the structural perfection of the new heterojunctions GaAs-(Ge2)1− x (ZnSe)x, Ge-(Ge2)1−x (ZnSe)x, GaP-(Ge2)1−x (ZnSe)x, and Si-(Ge2)1−x (ZnSe)x

Author： Saidov A.   Koshchanov É.   Razzakov A.  

Publisher： MAIK Nauka/Interperiodica

ISSN： 1063-7850

Source： Technical Physics Letters, Vol.24, Iss.1, 1998-01, pp. : 47-48

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Related content

Liquid phase epitaxy of (GaAs)1−x (ZnSe)x solid solution layers from a lead-based solution melt

By Saidov A.   Razzakov A.   Gaimnazarov K.  

Technical Physics Letters, Vol. 27, Iss. 11, 2001-11 ,pp. : 973-974

MAIK Nauka/Interperiodica

Access to resources Recommend Favorite

X centers in ZnSe〈Ga〉 and ZnSe〈As〉 single crystals

By Tkachuk P.  

Physics of the Solid State, Vol. 44, Iss. 12, 2002-12 ,pp. : 2211-2215

MAIK Nauka/Interperiodica

Access to resources Recommend Favorite

Synthesis and characterization of (Si2)1−x−y (Ge2) x (GaAs) y continuous solid solutions

By Saidov A.   Usmonov Sh.   Kholikov K.   Saparov D.  

Technical Physics Letters, Vol. 33, Iss. 8, 2007-08 ,pp. : 701-703

MAIK Nauka/Interperiodica

Access to resources Recommend Favorite

Laser deposition and study of CuInS2x Se2(1−x) crystals and films

By Zaretskaya E.   Victorov I.   Gremenok V.   Mudryi A.  

Technical Physics Letters, Vol. 27, Iss. 1, 2001-01 ,pp. : 49-51

MAIK Nauka/Interperiodica

Access to resources Recommend Favorite

Optical properties of (Ge2)1−x (InP)x solid solutions

By Ismailov Sh.   Saidov A.   Durshimbetov K.   Zhollybekov B.  

Technical Physics Letters, Vol. 32, Iss. 6, 2006-06 ,pp. : 538-541

MAIK Nauka/Interperiodica

Access to resources Recommend Favorite