Related content

1.94-μm light-emitting diodes for moisture-content measurements

By Popov A.   Sherstnev V.   Yakovlev Yu.  

Technical Physics Letters, Vol. 23, Iss. 10, 1997-10 ,pp. : 783-785

MAIK Nauka/Interperiodica

Access to resources Recommend Favorite

AlGaAsSb lasers emitting in the 1.6 μm region

By Danilova T.   Zhurtanov B.   Imenkov A.   Sipovskaya M.   Yakovlev Yu.  

Technical Physics Letters, Vol. 25, Iss. 5, 1999-05 ,pp. : 395-397

MAIK Nauka/Interperiodica

Access to resources Recommend Favorite

Emissive characteristics of mesa-stripe lasers (λ=3.0–3.6 μm) made from InGaAsSb/InAsSbP double heterostructures

By Aidaraliev M.   Zotova N.   Karandashev S.   Matveev B.   Remenny M.   Stus’ N.   Talalakin G.  

Technical Physics Letters, Vol. 24, Iss. 6, 1998-06 ,pp. : 472-474

MAIK Nauka/Interperiodica

Access to resources Recommend Favorite

AlGaAs/GaAs-heterostructure cw laser diodes with a working output optical power of 3 W (λ=0.81 μm) and an operating life of 2000 hours

By Demidov D.   Katsavets N.   Leus R.   Ter-Martirosyan A.   Chalyi V.  

Technical Physics Letters, Vol. 23, Iss. 4, 1997-04 ,pp. : 331-332

MAIK Nauka/Interperiodica

Access to resources Recommend Favorite

Low-threshold quantum-dot injection heterolaser emitting at 1.84 μm

By Ustinov V.   Kovsh A.   Zhukov A.   Egorov A.   Ledentsov N.   Lunev A.   Shernyakov Yu.   Maksimov M.   Tsatsul’nikov A.   Volovik B.   Kop’ev P.   Alferov Zh.  

Technical Physics Letters, Vol. 24, Iss. 1, 1998-01 ,pp. : 22-23

MAIK Nauka/Interperiodica

Access to resources Recommend Favorite