Related content

Mesastripe single-mode separately bounded lasers based on InGaAsP/InP heterostructures obtained by VPE of organometallic compounds

By Golikova E.   Gorbylev V.   Il’in Yu.   Kureshov V.   Leshko A.   Lyutetskii A.   Pikhtin N.   Ryaboshtan Yu.   Simakov V.   Tarasov I.   Tret’yakova E.   Fetisova N.  

Technical Physics Letters, Vol. 26, Iss. 4, 2000-04 ,pp. : 295-297

MAIK Nauka/Interperiodica

Access to resources Recommend Favorite

High-power low-threshold laser diodes (λ=0.94μm) based on MBE-grown In_0.1Ga_0.9As/AlGaAs/GaAs heterostructures

By Aleksandrov S.   Alekseev A.   Demidov D.   Dudin A.   Katsavets N.   Kogan I.   Pogorel’skii Yu.   Ter-Martirosyan A.   Sokolov É.   Chaly V.   Shkurko A.  

Technical Physics Letters, Vol. 28, Iss. 8, 2002-08 ,pp. : 696-698

MAIK Nauka/Interperiodica

Access to resources Recommend Favorite

Equilibrium calculations for VPE-InGaAsP

By  

Revue de Physique Appliquée (Paris), Vol. 16, Iss. 1, 1981-01 ,pp. : 1-4

Edp Sciences

Access to resources Recommend Favorite

High-power 1.8-μm InGaAsP/InP lasers

By Golikova E.   Kureshov V.   Leshko A.   Lyutetskii A.   Pikhtin N.   Ryaboshtan Yu.   Slipchenko S.   Sokolova Z.   Fetisova N.   Bondarev A.   Tarasov I.  

Technical Physics Letters, Vol. 28, Iss. 2, 2002-02 ,pp. : 113-115

MAIK Nauka/Interperiodica

Access to resources Recommend Favorite

High-power single-mode 1.3-μm lasers based on InAs/AlGaAs/GaAs quantum dot heterostructures

By Livshits D.   Kovsh A.   Zhukov A.   Maleev N.   Mikhrin S.   Vasil’ev A.   Nikitina E.   Ustinov V.   Ledentsov N.   Lin G.   Chi J.  

Technical Physics Letters, Vol. 30, Iss. 1, 2004-01 ,pp. : 9-11

MAIK Nauka/Interperiodica

Access to resources Recommend Favorite