Related content

Liquid phase epitaxy of (GaAs)_1−x (ZnSe)_x solid solution layers from a lead-based solution melt

By Saidov A.   Razzakov A.   Gaimnazarov K.  

Technical Physics Letters, Vol. 27, Iss. 11, 2001-11 ,pp. : 973-974

MAIK Nauka/Interperiodica

Access to resources Recommend Favorite

Properties of GaInAsSb solid solutions obtained from antimony fluxes by liquid-phase epitaxy in the spinodal decay region

By Vasil’ev V.   Deryagin A.   Kuchinskii V.   Smirnov V.   Sokolovskii G.   Tret’yakov D.   Faleev N.  

Technical Physics Letters, Vol. 24, Iss. 3, 1998-03 ,pp. : 231-232

MAIK Nauka/Interperiodica

Access to resources Recommend Favorite

Photoconverters based on GaAs/Ge heterostructures grown by low-temperature liquid phase epitaxy

By Khvostikov V.   Lunin L.   Ratushnyi V.   Oliva É.   Shvarts M.   Khvostikova O.  

Technical Physics Letters, Vol. 29, Iss. 7, 2003-07 ,pp. : 592-593

MAIK Nauka/Interperiodica

Access to resources Recommend Favorite

Calculation of phase diagrams for solid solutions of ferroelectrics

By Glinchuk M.   Eliseev E.   Stephanovich V.  

Physics of the Solid State, Vol. 43, Iss. 5, 2001-05 ,pp. : 916-922

MAIK Nauka/Interperiodica

Access to resources Recommend Favorite

Aluminum nitride on silicon: Role of silicon carbide interlayer and chloride vapor-phase epitaxy technology

By Bessolov V.   Zhilyaev Yu.   Konenkova E.   Sorokin L.   Feoktistov N.   Sharofidinov Sh.   Shcheglov M.   Kukushkin S.   Mets L.   Osipov A.  

Technical Physics Letters, Vol. 36, Iss. 6, 2010-06 ,pp. : 496-499

MAIK Nauka/Interperiodica

Access to resources Recommend Favorite