On the properties of a radiation-induced defect responsible for the 1.0-eV IR absorption band in gallium arsenide

Author: Dzhibuti Z.   Dolidze N.  

Publisher: MAIK Nauka/Interperiodica

ISSN: 1063-7850

Source: Technical Physics Letters, Vol.27, Iss.12, 2001-12, pp. : 1008-1009

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