New values of the Ag-n-GaP potential barrier

ISSN： 1063-7850

Source： Technical Physics Letters, Vol.28, Iss.10, 2002-10, pp. : 872-873

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Related content

Photosensitivity of GaAs: NGaP: N/GaAs (GaP) heterojunctions in linearly polarized radiation

By Ivanov-Omskii V. Rud’ Yu. Rud’ V.

Technical Physics, Vol. 44, Iss. 6, 1999-06 ,pp. : 732-735

MAIK Nauka/Interperiodica

Access to resources Recommend Favorite

Impurity breakdown and electroluminescence in the terahertz range in p-GaAs and p-GaAsN microstructures

By Vorob’ev L. Firsov D. Shalygin V. Panevin V. Sofronov A. Tsoi D. Egorov A. Gladyshev A. Bondarenko O.

Technical Physics Letters, Vol. 32, Iss. 5, 2006-05 ,pp. : 384-387

MAIK Nauka/Interperiodica

Access to resources Recommend Favorite

p-GaSe-n-Ga₂S₃ heterojunctions

By Kovalyuk M. Vitkovskaya V. Tovarnitskii M.

Technical Physics Letters, Vol. 23, Iss. 5, 1997-05 ,pp. : 385-385

MAIK Nauka/Interperiodica

Access to resources Recommend Favorite

Phototransmittance involving bound excitons in GaP(N) and GaAs_1−xP_x(N).

By Ivkin A. Pikhtin A.

Technical Physics Letters, Vol. 24, Iss. 6, 1998-06 ,pp. : 419-420

MAIK Nauka/Interperiodica

Access to resources Recommend Favorite

Long-wavelength photodiodes based on n-GaSb/n-GaInAsSb/p-AlGaAsSb heterostructures

By Astakhova A. Zhurtanov B. Imenkov A. Mikhailova M. Sipovskaya M. Stoyanov N. Yakovlev Yu.

Technical Physics Letters, Vol. 33, Iss. 1, 2007-01 ,pp. : 11-13

MAIK Nauka/Interperiodica

Access to resources Recommend Favorite