High-power low-threshold laser diodes (λ=0.94μm) based on MBE-grown In0.1Ga0.9As/AlGaAs/GaAs heterostructures

Author： Aleksandrov S.   Alekseev A.   Demidov D.   Dudin A.   Katsavets N.   Kogan I.   Pogorel’skii Yu.   Ter-Martirosyan A.   Sokolov É.   Chaly V.   Shkurko A.  

Publisher： MAIK Nauka/Interperiodica

ISSN： 1063-7850

Source： Technical Physics Letters, Vol.28, Iss.8, 2002-08, pp. : 696-698

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