Using intrinsic gallium arsenide oxide for insulating active elements in GaAs-based integrated circuits

Author： Lezhava N.   Bibilashvili A.   Gerasimov A.  

Publisher： MAIK Nauka/Interperiodica

ISSN： 1063-7850

Source： Technical Physics Letters, Vol.31, Iss.1, 2005-01, pp. : 75-76

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Related content

Parasitic Capacitances and Inductances for Multilevel Interconnections on GaAs-Based Integrated Circuits

By Goel A.K.   Huang Y.R.  

Journal of Electromagnetic Waves and Applications, Vol. 5, Iss. 4-5, 1991-01 ,pp. : 477-502

Taylor & Francis Ltd

Access to resources Recommend Favorite

A hydrogen-sensitive structure based on semi-insulating gallium arsenide

By Karpovich I.   Tikhov S.   Shobolov E.   Zvonkov B.  

Technical Physics Letters, Vol. 28, Iss. 4, 2002-04 ,pp. : 320-322

MAIK Nauka/Interperiodica

Access to resources Recommend Favorite

X-ray detectors based on epitaxial gallium arsenide

By Ayzenshtat G.   Vilisova M.   Drugova E.   Lelekov M.   Mokeev D.   Ponomarev I.   Porokhovnichenko L.   Tolbanov O.   Chubirko V.  

Technical Physics, Vol. 51, Iss. 8, 2006-08 ,pp. : 1008-1011

MAIK Nauka/Interperiodica

Access to resources Recommend Favorite

Characteristics of the interfaces and the properties of chromium oxide nanolayers on gallium arsenide

By Ezhovski Yu.   Egorov A.  

Physics of the Solid State, Vol. 49, Iss. 9, 2007-09 ,pp. : 1638-1642

MAIK Nauka/Interperiodica

Access to resources Recommend Favorite

High Current Operation of a Semi-insulating Gallium Arsenide Photoconductive Semiconductor Switch Triggering a Spark Gap

By Ming Xu   Wei Shi   Lei Hou   Hong Xue   Shen-Jiang Wu   Hui-Ying Dai  

Chinese Physics Letters, Vol. 27, Iss. 2, 2010-02 ,pp. : 24212-24214

IOP Publishing

Access to resources Recommend Favorite