Increasing the operating frequency in high-power distributed microgate bipolar switches

Author： Gorbatyuk A. Grekhov I. Gusin D.

ISSN： 1063-7850

Source： Technical Physics Letters, Vol.36, Iss.10, 2010-10, pp. : 945-948

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Related content

Latent spatial instability of current in high-power bipolar switches

By Gorbatyuk A.

Technical Physics Letters, Vol. 32, Iss. 12, 2006-12 ,pp. : 999-1002

MAIK Nauka/Interperiodica

Access to resources Recommend Favorite

Subnanosecond breakage of current in high-power semiconductor switches

By Rukin S. Tsyranov S.

Technical Physics Letters, Vol. 26, Iss. 9, 2000-09 ,pp. : 824-826

MAIK Nauka/Interperiodica

Access to resources Recommend Favorite

Figures of merit in high-frequency and high-power GaN HEMTs

Journal of Physics: Conference Series , Vol. 193, Iss. 1, 2009-11 ,pp. : 159-162

IOP Publishing

Access to resources Recommend Favorite

Outlook for the use of microsecond plasma opening switches to generate high-power nanosecond current pulses

By Dolgachev G. Maslennikov D. Ushakov A.

Plasma Physics Reports, Vol. 32, Iss. 12, 2006-12 ,pp. : 1007-1019

MAIK Nauka/Interperiodica

Access to resources Recommend Favorite

Efficiency-optimized monolithic frequency stabilization of high-power diode lasers

By Crump P Schultz C M Wenzel H Erbert G Tränkle G

Journal of Physics D: Applied Physics, Vol. 46, Iss. 1, 2013-01 ,pp. : 13001-13020

IOP Publishing

Access to resources Recommend Favorite