High growth rate of AlN in a planetary MOVPE reactor

Author： Lundin W. Nikolaev A. Sakharov A. Brunkov P. Zavarin E. Tsatsulnikov A.

ISSN： 1063-7850

Source： Technical Physics Letters, Vol.36, Iss.12, 2010-12, pp. : 1133-1135

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Related content

Catalyst-Assisted Growth of AlN Nanowires

By Wu Hue-Min

Ferroelectrics, Vol. 383, Iss. 1, 2009-01 ,pp. : 73-77

Taylor & Francis Ltd

Access to resources Recommend Favorite

Growth of threaded AlN whiskers by a physical vapor transport method

By Jun Wang Meng Zhao Si-Bin Zuo Wen-Jun Wang

Chinese Physics B, Vol. 23, Iss. 8, 2014-08 ,pp. : 88103-88107

IOP Publishing

Access to resources Recommend Favorite

Epitaxial growth and optical properties of Al- and N-polar AlN films by laser molecular beam epitaxy

By Chen X W Jia C H Chen Y H Wang H T Zhang W F

Journal of Physics D: Applied Physics, Vol. 47, Iss. 12, 2014-03 ,pp. : 125303-125309

IOP Publishing

Access to resources Recommend Favorite

The effects of growth temperature of AlN buffer layers on a-plane GaN grown on r-plane sapphire by MOCVD

Journal of Physics: Conference Series , Vol. 276, Iss. 1, 2011-02 ,pp. : 1180-1187

IOP Publishing

Access to resources Recommend Favorite