Modeling the deflection of relativistic particles in axial and planar channels of a silicon crystal

Author： Koshcheev V.   Morgun D.   Shtanov Yu.  

Publisher： MAIK Nauka/Interperiodica

ISSN： 1063-7850

Source： Technical Physics Letters, Vol.39, Iss.10, 2013-10, pp. : 924-927

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Related content

Modeling deflection of 450-GeV protons in a bent silicon crystal

By Koshcheev V.   Safin N.   Morgun D.  

Technical Physics Letters, Vol. 33, Iss. 8, 2007-08 ,pp. : 658-660

MAIK Nauka/Interperiodica

Access to resources Recommend Favorite

Quasi-stationary distribution of relativistic particles in a bent crystal

By Koshcheev V.  

Technical Physics Letters, Vol. 28, Iss. 12, 2002-12 ,pp. : 986-987

MAIK Nauka/Interperiodica

Access to resources Recommend Favorite

Mechanisms of high energy charged particles beams deflection by a bent crystal

By  

Journal of Physics: Conference Series , Vol. 236, Iss. 1, 2010-06 ,pp. : 218-222

IOP Publishing

Access to resources Recommend Favorite

Planar channeling radiation by relativistic electrons in different structures of silicon carbide

By  

Journal of Physics: Conference Series , Vol. 357, Iss. 1, 2012-05 ,pp. : 192-199

IOP Publishing

Access to resources Recommend Favorite

Channeling of Relativistic Electrons in Half-Wave Silicon Crystal and Corresponding Radiation

By  

Journal of Physics: Conference Series , Vol. 635, Iss. 6, 2015-09 ,pp. : 5-5

IOP Publishing

Access to resources Recommend Favorite