

Author: Bobylev S. Morozov N. Ovid’ko I. Shenerman A.
Publisher: MAIK Nauka/Interperiodica
ISSN: 1028-3358
Source: Doklady Physics, Vol.52, Iss.6, 2007-06, pp. : 312-314
Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.
Related content




Polycrystalline Silicon Characteristics Dependence on Starting Amorphous Material
Le Journal de Physique IV, Vol. 05, Iss. C5, 1995-06 ,pp. :






MORPHOLOGY AND RESISTIVITY OF CVD POLYCRYSTALLINE SILICON LAYERS CONTAINING CARBON
Le Journal de Physique Colloques, Vol. 43, Iss. C1, 1982-10 ,pp. :