Optimized subsequent-annealing-free Ni/Ag based metallization contact to p-type GaN for vertical light emitting diodes with high yield and extremely low operating voltage (2.75 V@350 mA, >95%)

Author： Guo Enqing   Liu Zhiqiang   Zhan Teng   Guo Jinxia   Li Jing   Wang Guohong   Tian Ting   Wang Liancheng   Yi Xiaoyan  

Publisher： IOP Publishing

ISSN： 0022-3727

Source： Journal of Physics D: Applied Physics, Vol.47, Iss.11, 2014-03, pp. : 115102-115108

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