The effect of gate dielectric modification and film deposition temperature on the field effect mobility of copper (II) phthalocyanine thin-film transistors

Author： Sinha Sumona   Wang C-H   Mukherjee M   Yang Y-W  

Publisher： IOP Publishing

ISSN： 0022-3727

Source： Journal of Physics D: Applied Physics, Vol.47, Iss.24, 2014-06, pp. : 245103-245111

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