Physics-based analysis of low frequency drain noise-current in AlxGa1−xN/GaN HFETs

Author: Manouchehri F   Valizadeh P   Kabir M Z  

Publisher: IOP Publishing

ISSN: 0022-3727

Source: Journal of Physics D: Applied Physics, Vol.47, Iss.8, 2014-02, pp. : 85104-85111

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