Comparison of shallow-mesa InAs/AlSb HEMTs with and without early-protection for long-term stability against Al(Ga)Sb oxidation*

Author： Lefebvre Eric Moschetti Giuseppe Malmkvist Mikael Desplanque Ludovic Wallart Xavier Grahn Jan

Publisher： IOP Publishing

ISSN： 0268-1242

Source： Semiconductor Science and Technology, Vol.29, Iss.3, 2014-03, pp. : 35010-35016

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