Flat-band voltage and low-field mobility analysis of junctionless transistors under low-temperature

Author： Joo Min-Kyu Mouis Mireille Jeon Dae-Young Barraud Sylvain Kim Gyu-Tae Ghibaudo Gérard

ISSN： 0268-1242

Source： Semiconductor Science and Technology, Vol.29, Iss.4, 2014-04, pp. : 45024-45036

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Related content

Analysis and simulation of the current gain of polysilicon emitter bipolar transistors for low-temperature operation

By Huang Liu Xing Wei Tong Li Zheng Jiang

International Journal of Electronics, Vol. 80, Iss. 1, 1996-01 ,pp. : 21-33

Taylor & Francis Ltd

Access to resources Recommend Favorite

An X-band ultra-low phase noise differential Colpitts voltage-controlled oscillator using 0.15 m pseudomorphic high electron mobility transistor technology

By Fu Jeffrey

International Journal of Electronics, Vol. 97, Iss. 5, 2010-05 ,pp. : 605-611

Taylor & Francis Ltd

Access to resources Recommend Favorite

Steady-State Electron Transport and Low-Field Mobility of Wurtzite Bulk ZnO and Zn 1−x Mg x O

By Yarar Z.

Journal of Electronic Materials, Vol. 40, Iss. 4, 2011-04 ,pp. : 466-472

Springer Publishing Company

Access to resources Recommend Favorite

High performance 20 nm GaSb/InAs junctionless tunnel field effect transistor for low power supply

Journal of Semiconductors, Vol. 36, Iss. 2, 2015-02 ,pp. : 24003-24008

IOP Publishing

Access to resources Recommend Favorite

A low-voltage wide-band CMOS precision full-wave rectifier

By Riewruja Vanchai Guntapong Rojanakorn

International Journal of Electronics, Vol. 89, Iss. 6, 2002-06 ,pp. : 467-476

Taylor & Francis Ltd

Access to resources Recommend Favorite