Tunable threshold voltage of an n-type Si nanowire ferroelectric-gate field effect transistor for high-performance nonvolatile memory applications

Author：   Lee Jae-Hyun     Cha SeungNam   Whang Dongmok      

Publisher： IOP Publishing

ISSN： 0957-4484

Source： Nanotechnology, Vol.25, Iss.20, 2014-05, pp. : 205201-205208

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