100-nm T-gate InAlAs/InGaAs InP-based HEMTs with fT = 249 GHz and fmax = 415 GHz

Author: Li-Dan Wang   Peng Ding   Yong-Bo Su   Jiao Chen   Bi-Chan Zhang   Zhi Jin  

Publisher: IOP Publishing

ISSN: 1674-1056

Source: Chinese Physics B, Vol.23, Iss.3, 2014-03, pp. : 38501-38506

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