Binding energies of impurity states in strained wurtzite GaN/Al_xGa_1−xN heterojunctions with finitely thick potential barriers

Author： Zhen-Yu Feng Shi-Liang Ban Jun Zhu

Publisher： IOP Publishing

ISSN： 1674-1056

Source： Chinese Physics B, Vol.23, Iss.6, 2014-06, pp. : 66801-66806

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