Comparative study of gate oxide in 4H-SiC lateral MOSFETs subjected to post-deposition-annealing in N2O and POCl3

Author： Fiorenza P.   Swanson L.   Vivona M.   Giannazzo F.   Bongiorno C.   Frazzetto A.   Roccaforte F.  

Publisher： Springer Publishing Company

ISSN： 0947-8396

Source： Applied Physics A, Vol.115, Iss.1, 2014-04, pp. : 333-339

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Related content

Conduction Mechanisms at SiO2/4H-SiC Interfaces in MOS-Based Devices Subjected to Post Deposition Annealing in N2O

By  

Materials Science Forum, Vol. 2016, Iss. 858, 2016-06 ,pp. : 705-708

Trans Tech Publications

Access to resources Recommend Favorite

Probing at Nanoscale Underneath the Gate Oxides in 4H-SiC MOS-Based Devices Annealed in N

By  

Materials Science Forum, Vol. 2014, Iss. 806, 2015-01 ,pp. : 143-147

Trans Tech Publications

Access to resources Recommend Favorite

Comparative Study of Characteristics of Lateral MOSFETs Fabricated on 4H-SiC (11-20) and (1-100) Faces

By  

Materials Science Forum, Vol. 2015, Iss. 821, 2015-07 ,pp. : 721-724

Trans Tech Publications

Access to resources Recommend Favorite

Cathodoluminescence Study of SiO2/4H-SiC Structures Treated with High-Temperature Post-Oxidation Annealing

By  

Materials Science Forum, Vol. 2016, Iss. 858, 2016-06 ,pp. : 445-448

Trans Tech Publications

Access to resources Recommend Favorite

Time Resolved Gate Oxide Stress of 4H-SiC Planar MOSFETs and NMOS Capacitors

By  

Materials Science Forum, Vol. 2016, Iss. 858, 2016-06 ,pp. : 611-614

Trans Tech Publications

Access to resources Recommend Favorite