The variation of temperature‐dependent carrier concentration and mobility in AlGaN/AlN/GaN heterostructure with SiN passivation

Publisher： John Wiley & Sons Inc

E-ISSN： 1521-3951|252|9|1960-1965

ISSN： 0370-1972

Source： PHYSICA STATUS SOLIDI (B) BASIC SOLID STATE PHYSICS, Vol.252, Iss.9, 2015-09, pp. : 1960-1965

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