Advantages of utilizing through‐silicon‐vias in SiGe HBT RF low‐noise amplifier design

E-ISSN： 1098-2760|57|11|2703-2706

ISSN： 0895-2477

Source： MICROWAVE AND OPTICAL TECHNOLOGY LETTERS, Vol.57, Iss.11, 2015-11, pp. : 2703-2706

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