Author： Jiménez J. Cánovas E. Avella M.
Publisher： Edp Sciences
E-ISSN： 1286-0050|27|1-3|67-73
ISSN： 1286-0042
Source： EPJ Applied Physics (The), Vol.27, Iss.1-3, 2010-03, pp. : 67-73
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Abstract
Spectroscopic techniques are necessary for the characterization of optoelectronic materials. Among the experimental means used for such characterization, luminescence techniques play a relevant role because they supply information about the mechanisms generating light and are sensitive to structural aspects. Raman spectroscopy provides useful information about alloy instabilities and is sensitive to stress and temperature. Results concerning optoelectronic materials are presented with special emphasis on the application of these techniques to the degradation of laser diodes.
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