The growth of boron doped (100) textured diamond films by three-stepprocess

Author： Chen Chau-Shu   Chen Chi-Ling   Lue Juh-Tzeng  

Publisher： Edp Sciences

E-ISSN： 1286-0050|11|1|3-8

ISSN： 1286-0042

Source： EPJ Applied Physics (The), Vol.11, Iss.1, 2010-03, pp. : 3-8

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Abstract

p-type (100) faceted diamond films can be successfully grown by bubbling H2 through liquid B(OCH3)3 during the Microwave Plasma EnhancedChemical Vapour Deposition (MPCVD). Ramann spectra and scanning electronmicrographs (SEM) convincingly illustrate that diamond-film growth onsilicon substrates by a three-step process yields good uniformity withpreferential orientation. The field emission current density of the borondoped diamond films can be enhanced from 0.7 μA/cm2 for the asgrown films to 140 μA/cm2 at an applied field of 20 V/μm by hydrogenation treatment.

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