Measurement of process-induced defects in Si sub-micron devices by combination of EDMR and TEM

Author: Umeda T.   Toda A.   Mochizuki Y.  

Publisher: Edp Sciences

E-ISSN: 1286-0050|27|1-3|13-19

ISSN: 1286-0042

Source: EPJ Applied Physics (The), Vol.27, Iss.1-3, 2010-03, pp. : 13-19

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Abstract