PSPICE model of the power LDMOS transistor for radio frequency applications in the 1.8 – 2.2 GHz Band

Author: Kassmi K.   Nolhier N.   Rossel P.   Tranduc H.   Kouakou P.   Gola P.   El Hitmy M.   Maimouni R.  

Publisher: Edp Sciences

E-ISSN: 1286-0050|5|2|171-178

ISSN: 1286-0042

Source: EPJ Applied Physics (The), Vol.5, Iss.2, 2010-03, pp. : 171-178

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract