The role of a top oxide layer in cavities formed by MeV He implantation into Si

Author： Liu C.   Ntsoenzok E.   Delamare R.   Alquier D.   Regula G.  

Publisher： Edp Sciences

E-ISSN： 1286-0050|23|1|45-48

ISSN： 1286-0042

Source： EPJ Applied Physics (The), Vol.23, Iss.1, 2003-06, pp. : 45-48

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