Nuclear Spin relaxation mediated by Fermi-edge electrons in n-type GaAs

Author： Kotur M.   Dzhioev R.   Kavokin K.   Korenev V.   Namozov B.   Pak P.   Kusrayev Yu.  

Publisher： MAIK Nauka/Interperiodica

ISSN： 0021-3640

Source： JETP Letters, Vol.99, Iss.1, 2014-03, pp. : 37-41

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Related content

In situ observation of the relaxation of conductivity in γ-irradiated n-type silicon under the action of ultrasound pulses

By Olikh Ya.   Tymochko M.  

Technical Physics Letters, Vol. 37, Iss. 1, 2011-01 ,pp. : 37-40

MAIK Nauka/Interperiodica

Access to resources Recommend Favorite

Effect of nonequilibrium phonons on hot-electron spin relaxation in n-type GaAs quantum wells

By Zhang P.   Wu M. W.  

EPL (EUROPHYSICS LETTERS), Vol. 92, Iss. 4, 2010-12 ,pp. : 47009-47009

Edp Sciences

Access to resources Recommend Favorite

Nuclear Spin Relaxation Studied by β-NMR of 12N Implanted in TiO2

By Mihara M.   Nakashima Y.   Kumashiro S.   Fujiwara H.   Zheng Y.   Ogura M.   Sumikama T.   Nagatomo T.   Minamisono K.   Fukuda M.   Matsuta K.   Minamisono T.  

Hyperfine Interactions, Vol. 159, Iss. 1-4, 2004-12 ,pp. : 187-191

Springer Publishing Company

Access to resources Recommend Favorite

Control of the morphology of n-type porous silicon

By Buchin É.   Prokaznikov A.  

Technical Physics Letters, Vol. 23, Iss. 3, 1997-03 ,pp. : 244-245

MAIK Nauka/Interperiodica

Access to resources Recommend Favorite

Electron spin relaxation in p-type GaAs quantum wells

By  

New Journal of Physics, Vol. 11, Iss. 11, 2009-11 ,pp. : 512-527

IOP Publishing

Access to resources Recommend Favorite